By Vivek Bakshi
Severe ultraviolet lithography (EUVL) is the imperative lithography expertise aiming to fabricate desktop chips past the present 193-nm-based optical lithography, and up to date development has been made on a number of fronts: EUV mild resources, optics, optics metrology, infection regulate, mask and masks dealing with, and resists. This complete quantity is made from contributions from the world's prime EUVL researchers and offers the entire serious info wanted by way of practitioners and people short of an creation to the sphere. Contents contain: * The historical past of EUV Lithography * EUV resource expertise (requirements, expertise descriptions, and standing) * EUV optics (projection process layout, multilayer coatings, and substrates) * a variety of EUV wavefront dimension options for optical checking out *Contamination and its keep an eye on in EUVL scanners (optics and collector optics infection) * EUV masks and masks metrology (substrates, clean fabrication, absorber stacks and bottom conductive coatings, patterning, cleansing, and part shift mask) * the basics and improvement of EUV face up to know-how, together with LER * The layout and elements of the 1st METs, that have enabled withstand improvement * the basic layout concerns for an EUVL scanner and outlines of a full-field scanner's a variety of parts * EUVL process patterning functionality * Lithography expense of possession. curiosity in EUVL expertise maintains to extend, and this quantity presents the root required for realizing and using this interesting know-how.
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Extra info for EUV Lithography (SPIE Press Monograph Vol. PM178)
Sample text
The normal-incidence reflectance of the best modern Mo-Si MLs now approaches 70% in a narrow band of wavelengths near 13 nm,72 as shown in Fig. 29(b). 29 (a) Normal incidence reflectances of clean Al (triangles) and Ir (squares) surfaces. (Reprinted from Ref. ) (b) Normal-incidence reflectance of a Mo/Si ML with 40 bilayers measured at the Center for X-Ray Optics (CXRO) and at Physikalisch-Technische Bundesanstalt (PTB). (Reprinted from Ref. ) Depositing a ML film on a curved optical surface produced several practical problems.
Later, an imaging system designed to work near the absorption edge of Si was built at the High Energy Physics Laboratory in Tsukuba, Japan, and the initial experiments were carried out at that location. In the beginning, the alignment accuracy of the imaging-system mirrors was very poor because the alignment was carried out with a visible microscope, and all of the replicated patterns were severely distorted. An image of a 4-μm line and space pattern was finally produced in 1985 (see Fig. 3), and the results of the early experiments were first presented at the annual meeting of the Japan Society of Applied Physics in 1986.
3 Fabrication and evaluation of aspherical mirrors In the late 1980s, the surface figure and surface finish tolerances of the mirrors needed for EUV imaging systems were well beyond the capabilities of the optics industry. ). Before 1990, commercial phase-measuring interferometers (PMIs) offered λ/1000 resolution and λ/300 repeatability. Absolute figure uncertainty was about λ/20 for flats up to 150 nm in diameter and no better than λ/10 or so for spheres, largely because of the quality of the reference surfaces that were available at that time.