By Weller P.
This paintings describes the impression of movie thickness (0.2 to 3.1 чm) and Al content material (45 to fifty two at-% Al) at the yield power, the fracture sturdiness and the creep power of polycrystalline NiAl movies. The NiAl movies have been sputter-deposited on Si substrates and have been thermally cycled as much as seven hundred °C. the strain evolution in the course of thermal biking used to be measured utilizing a laser-optical substrate-curvature strategy.
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Extra info for Thermo-mechanical behavior of NiAl thin films
Example text
7. 7). 7 and table 3-2). If the parameter Z is known, the total energy release rate Gc in equation (3-2) can be calculated from the film thickness, fracture stress and plane-strain elastic modulus of the film (table 3-2). 4 J/m2 for fracture along {111} Si planes [69]. Solving equation (3-5) for Γf and inserting the ratio of substrate crack length to film thickness and the total energy release rate as determined according to equation (3-2) yields the fracture energy of the NiAl films. 5 . 9 MPa m1/2.
5 times the film thickness was chosen. 4). Such a trend can be seen in the cross sectional SEM and FIB observations. However, due to the lack of contrast a more precise analysis of substrate crack lengths was not possible. 3 Cracking behavior during cooling The stress measurements during cooling showed that, once cracking occurred, the film stress continuously decreased with decreasing temperature (see figures 3-4, 3-5 and 3-6). This implies that the film stiffness is continuously lowered by further crack propagation.
The plane strain modulus of the {211} texture component was calculated by averaging the plane strain modulus along < 0 1 1 > and < 1 1 1 > directions. It turned out that the plane strain moduli of {111} and {211} orientations have similar values with 235 GPa for {111} and 231 GPa for {211} oriented grains. Consequently, the texture and thus the chemical composition of the Al-rich films have a negligible influence on the plane strain modulus of the Al-rich NiAl films. Therefore, the elastic mismatch between the brittle NiAl films and the Si substrates was assumed to be independent of the Al content.