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Most IMD surfaces have a low reactivity (reactive site density) and island-type growth is observed. To guarantee the barrier property of the ALD film, at least a continuous layer on top of the substrate is required. The amount of ALD TiN (TiCl4/NH3) required to cover the starting surface is larger than a monolayer of the expected material (Figure 4) as was found in a study using Rutherford backscattering spectroscopy (RBS) to determine the amount of deposited layers, and time-of-flight secondary ion mass spectrometry (ToF-SIMS) – for which the depth information is limited to 1–3 monolayers (<10 Å) – to determine the coverage of the substrate [17].
A decreased resistivity and low chlorine content as compared to the binary TiCl4/NH3 system has been found. Another example for ternary barrier films is TiSixNy, which consists of titanium silicon nitride material. When silane (SiH4) and NH3 were dosed together the growth-per-cycle and composition was strongly dependent on the SiH4/NH3 ratio. The growth-per-cycle decreased with increasing silicon content. 2 Å was obtained. Compared to thermal processing techniques, the activation energy of the chemisorption, ligand exchange, and redox reactions are more readily overcome in plasma-enhanced ALD (PEALD) in which the non-metal precursor is activated by a plasma source.
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